Pulsed laser deposition Technology

Solmates' thin film process equipment is based on pulsed laser deposition (PLD). PLD is a Physical Vapour Deposition (PVD) process that offers many advantages above other conventional techniques.

PLD benefits that create opportunities for future applications are the one-to-one transfer of elements from target to substrate, the ultra low damage to substrates, low temperature growth and excellent control of density.

PLD can be compared with Sputtering, only that the plasma is generated by a UV laser irradiation instead of Argon ion bombardment.

Solmates is leading the PLD development
PLD has been used for deposition on small scale samples (10 x 10 mm) since 1961. Since then many unique processes were developed but never on wafer scale. Solmates developed PLD equipment for wafers up to 200mm that matches industrial standards. Solmates owns patents on critical aspects of revolutionary PLD technology as well as on specific processes.

Various materials
Solmates’ PLD technology is suitable to deposit many different materials, as can be seen in the overview below. Selected processes have been optimized for specific markets.

Read all about the unique power of Pulsed Laser Deposition

Overview of our markets, PLD application and materials

Markets Application / Functionality Materials
RF & 5G SAW, BAW, timing devices, discrete devices (varactors, beam-steering, high-K) Sc:AlN, AlN, BN, BaTiO3, Ba1-xSrxTiO3, LiNbO3
OLED & LED Anti-reflection, TCO's, barriers, passivation Al2O3, AZO, HfO2, IGZO, ITO, IZO, IZrO, IWO, MgO, Mg-ZnO, Ta2O5, ZnO, ZrO2
MEMS & NEMS Sensing, actuation, acoustics Al2O3, BiFeO3, KNN, LaNiO3, PbTiO3, Pb(Zr, Ti)O3, PMN-PT, SrRuO3, LiNbO3, ZnO, AlN, Sc:AlN, HfO2
CMOS & Power IC High-k, passivation, barriers, spintronics AlN, Al2O3, CeO2, HfO2, MgO, PZT, SrTiO3, TiN, ZrO22
Energy SOFC, PV, batteries, thermoelectrics YSZ, CIGS, Gd-CeO2, ITO, (La,Sr)(Co, Fe)O3, LixMnO2, LixCoO2, NaxCoO2, AlOx, MoOx, TiOx
Photonics Electro-optics, IR-detection, waveguides, quantum computing, Pockels effect Al2O3, BaTiO3, ITO, LiNbO3, PLZT, Y3Fe5O12, ZnO, Bi:YIG
Memory MRAM Sc:AlN, Gd:HfO2, BiFeO3, CoFe2O4, CrO2, LSMO, MnFe2O4, MnO2
Conductors Electrodes, reflectors, alloys, super-conductors, metal-insulator transition, oxide electrodes Ba(Bi, Pb)O3, LaNiO3, SrRuO3, SrLaCuO4, V2O3, Yba2Cu3O7-x, ITO, IZO, IZrO, IWO
Epitaxy Templates, superlattices, 2D-materials CeO2, GaN, LaAlO3, MgO, SrTiO3, TiN, YSZ, MoS2