Minh D. Nguyen, Matthijn Dekkers, Evert P. Houwman, Hien T. Vuc, Hung N. Vuc, Guus Rijnders
Materials Letters, 164 (2016), Pages 413–416.
Thin film capacitors of the lead-free (K0.5Na0.5)NbO3 (KNN) with (100) orientation were grown on Pt/Ti/SiO2/SOI (silicon-on-insulator) substrates by pulsed laser deposition. The films are pure phases and do not show other crystal orientations. The remnant polarization Pr, saturation polarization Psat, longitudinal d33,f and transverse (d31,f and e31,f) piezoelectric coefficients of the KNN films were determined (Pr=12.6 µC/cm2, Psat=25.0 µC/cm2, d33,f=58 pm/V, d31,f=−42 pm/V and e31,f=−5.6 C/m2). These values are well comparable with the highest values reported for lead-free films of different compositions and therefore these KNN films form a potential alternative to PZT films in lead-free MEMS applications.
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